Method of fabricating oxide semiconductor device

Invention Grant

US07883934B2 Method of fabricating oxide semiconductor device 失效

Title translation: 氧化物半导体器件的制造方法

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Patent Title: Method of fabricating oxide semiconductor device
Patent Title (中): 氧化物半导体器件的制造方法
Application No.: US12708601

Application Date: 2010-02-19
Publication No.: US07883934B2

Publication Date: 2011-02-08
Inventor: Nobuyuki Kaji , Hisato Yabuta
Applicant: Nobuyuki Kaji , Hisato Yabuta
Applicant Address: JP Tokyo
Assignee: Canon Kabushiki Kaisha
Current Assignee: Canon Kabushiki Kaisha
Current Assignee Address: JP Tokyo
Agency: Fitzpatrick, Cella, Harper & Scinto
Priority: JP2005-258268 20050906
Main IPC: H01L21/423
IPC: H01L21/423

Method of fabricating oxide semiconductor device

Abstract:

A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

Abstract(Chinese):

一种使用氧化物半导体的器件的制造方法，包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。

Public/Granted literature

US20100144089A1 METHOD OF FABRICATING OXIDE SEMICONDUCTOR DEVICE Public/Granted day:2010-06-10

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/42	....用辐射轰击的
H01L21/423	.....带有高能辐射的