Invention Grant
- Patent Title: Angled implantation for deep submicron device optimization
- Patent Title (中): 用于深亚微米器件优化的角度植入
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Application No.: US12151646Application Date: 2008-05-08
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Publication No.: US07883946B1Publication Date: 2011-02-08
- Inventor: Che Ta Hsu , Christopher J. Pass , Dale Ibbotson , Jeffrey T. Watt , Yanzhong Xu
- Applicant: Che Ta Hsu , Christopher J. Pass , Dale Ibbotson , Jeffrey T. Watt , Yanzhong Xu
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agent L. Cho
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/22 ; H01L21/38
Abstract:
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.
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