Self-aligned epitaxially grown bipolar transistor

Invention Grant

US07883954B2 Self-aligned epitaxially grown bipolar transistor 有权

Title translation: 自对准外延生长双极晶体管

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Patent Title: Self-aligned epitaxially grown bipolar transistor
Patent Title (中): 自对准外延生长双极晶体管
Application No.: US11574013

Application Date: 2005-08-19
Publication No.: US07883954B2

Publication Date: 2011-02-08
Inventor: Peter Magnee , Wibo Van Noort , Johannes Donkers
Applicant: Peter Magnee , Wibo Van Noort , Johannes Donkers
Applicant Address: NL Eindhoven
Assignee: NXP B.V.
Current Assignee: NXP B.V.
Current Assignee Address: NL Eindhoven
International Application: PCT/IB2005/052741 WO 20050819
International Announcement: WO2006/018821 WO 20060223
Main IPC: H01L21/8238
IPC: H01L21/8238

Self-aligned epitaxially grown bipolar transistor

Abstract:

The illumination system has a light source (1) with a plurality of light emitters (R, G, B). The light emitters comprise at least a first light-emitting diode of a first primary color and at least a second light-emitting diode of a second primary color, the first and the second primary colors being distinct from each other. The illumination system has a facetted light-collimator (2) for collimating light emitted by the light emitters. The facetted lightcollimator is arranged along a longitudinal axis (25) of the illumination system. Light propagation in the facetted light-collimator is based on total internal reflection or on reflection at a reflective coating provided on the facets of the facetted light-collimator. The facetted light-collimator merges into a facetted light-reflector (3) at a side facing away from the light source. The illumination system further comprises a light-shaping diffuser (17). The illumination system emits light with a uniform spatial and spatio-angular color distribution.

Abstract(Chinese):

照明系统具有具有多个发光体（R，G，B）的光源（1）。光发射体至少包括第一原色的第一发光二极管和第二原色的至少第二发光二极管，第一和第二原色彼此不同。照明系统具有用于准直由发光体发射的光的分面光准直器（2）。分面光学增白器沿照明系统的纵向轴线（25）布置。在分面光准直仪中的光传播基于全内反射或基于设置在刻面光准直仪的面上的反射涂层的反射。分面光准直器在远离光源的一侧融合成分面的光反射器（3）。照明系统还包括光成形漫射器（17）。照明系统以均匀的空间和空间角色彩分布发光。

Public/Granted literature

US20090203184A1 Self-Aligned Epitaxially Grown Bipolar Transistor Public/Granted day:2009-08-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS