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US07883958B2 Phase change memory device having a diode that has an enlarged PN interfacial junction and method for manufacturing the same 有权
具有具有扩大的PN界面结的二极管的相变存储器件及其制造方法

  • Patent Title: Phase change memory device having a diode that has an enlarged PN interfacial junction and method for manufacturing the same
  • Patent Title (中): 具有具有扩大的PN界面结的二极管的相变存储器件及其制造方法
  • Application No.: US12433260
    Application Date: 2009-04-30
  • Publication No.: US07883958B2
    Publication Date: 2011-02-08
  • Inventor: Nam Kyun Park
  • Applicant: Nam Kyun Park
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2008-0110117 20081106
  • Main IPC: H01L21/8234
  • IPC: H01L21/8234
Phase change memory device having a diode that has an enlarged PN interfacial junction and method for manufacturing the same
Abstract:
A phase change memory device that has a diode with an enlarged, i.e., bulging, PN interfacial junction and a corresponding fabrication method are presented. The phase change memory device includes a semiconductor substrate, an insulation layer, a diode, and a phase change memory cell. The insulation layer is placed on the semiconductor substrate and has a contact hole which is wider in a middle portion than the lower and upper portions of the contact hole. The diode is formed within the contact hole and PN interfacial junction at the wider middle portion of the diode within the contact hole. The phase change memory cell is formed on top of the diode.
Abstract(Chinese):

提出了一种具有扩大的，即凸出的PN界面结的二极管和相应的制造方法的相变存储器件。 相变存储器件包括半导体衬底，绝缘层，二极管和相变存储单元。 绝缘层被放置在半导体衬底上，并且具有在接触孔的下部和上部的中部更宽的接触孔。 二极管形成在接触孔内的二极管的较宽中间部分的接触孔和PN界面结内。 相位存储单元形成在二极管的顶部。

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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
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