Invention Grant
- Patent Title: Semiconductor processing methods
- Patent Title (中): 半导体加工方法
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Application No.: US12855585Application Date: 2010-08-12
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Publication No.: US07883959B2Publication Date: 2011-02-08
- Inventor: Mark Fischer , Terrence B. McDaniel
- Applicant: Mark Fischer , Terrence B. McDaniel
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/8244

Abstract:
The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The electrically conductive material can be incorporated into an electrically-grounded shield, and/or can be configured to create a magnetic field bias. Also, the conductive material can have electrically isolated segments that are utilized as electrical jumpers for connecting circuit elements. The invention also includes semiconductor constructions comprising the electrically conductive material between line constructions associated with one or both of the pitch region and the peripheral region.
Public/Granted literature
- US20100304560A1 SEMICONDUCTOR PROCESSING METHODS Public/Granted day:2010-12-02
Information query
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