Manufacturing method for ferroelectric memory device

Invention Grant

US07883961B2 Manufacturing method for ferroelectric memory device 有权

Title translation: 铁电存储器件的制造方法

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Patent Title: Manufacturing method for ferroelectric memory device
Patent Title (中): 铁电存储器件的制造方法
Application No.: US11998176

Application Date: 2007-11-28
Publication No.: US07883961B2

Publication Date: 2011-02-08
Inventor: Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
Applicant: Hiroaki Tamura , Masaki Kurasawa , Hideki Yamawaki
Applicant Address: JP JP
Assignee: Seiko Epson Corporation,Fujitsu Semiconductor Limited
Current Assignee: Seiko Epson Corporation,Fujitsu Semiconductor Limited
Current Assignee Address: JP JP
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: JP2006-321470 20061129
Main IPC: H01L21/8242
IPC: H01L21/8242

Manufacturing method for ferroelectric memory device

Abstract:

A manufacturing method for a ferroelectric memory device including: forming a lower electrode; forming an electrode oxide film composed of an oxide of a constituent material of the lower electrode; forming a first ferroelectric layer on the lower electrode by reaction between organometallic source material gas and oxygen gas; forming a second ferroelectric layer on the first ferroelectric layer by reaction between organometallic source material gas and oxygen gas; and forming an upper electrode on the second ferroelectric layer. In the method, the oxygen gas in the forming of the first ferroelectric layer is in an amount less than the amount of oxygen necessary for reaction of the organometallic source material gas. In the method, the oxygen gas in the forming of the second ferroelectric layer is in an amount greater than the amount of oxygen necessary for reaction of the organometallic source material gas.

Abstract(Chinese):

一种铁电存储器件的制造方法，包括：形成下电极; 形成由下电极的构成材料的氧化物构成的电极氧化膜; 通过有机金属源材料气体和氧气之间的反应在下电极上形成第一铁电层; 通过有机金属源材料气体和氧气之间的反应在第一铁电体层上形成第二铁电层; 以及在所述第二铁电层上形成上电极。在该方法中，形成第一铁电体层中的氧气的量小于有机金属源材料气体反应所需的氧气量。在该方法中，形成第二铁电体层的氧气的量比有机金属源材料气体反应所需的氧气的量大。

Public/Granted literature

US20080145953A1 Manufacturing method for ferroelectric memory device Public/Granted day:2008-06-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）