Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12585555Application Date: 2009-09-17
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Publication No.: US07883974B2Publication Date: 2011-02-08
- Inventor: Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
- Applicant: Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-308564 20051024; JP2006-052166 20060228
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
Public/Granted literature
- US20100055854A1 Method of manufacturing semiconductor device Public/Granted day:2010-03-04
Information query
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