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US07883975B2 Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer 有权
一种用于制造非易失性存储器的方法，包括将形成在具有电荷存储层的层叠结构上的硅层转换成绝缘层

  • Patent Title: Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer
  • Patent Title (中): 一种用于制造非易失性存储器的方法，包括将形成在具有电荷存储层的层叠结构上的硅层转换成绝缘层
  • Application No.: US12615450
    Application Date: 2009-11-10
  • Publication No.: US07883975B2
    Publication Date: 2011-02-08
  • Inventor: Ming-Chang Kuo
  • Applicant: Ming-Chang Kuo
  • Applicant Address: TW Hsinchu
  • Assignee: MACRONIX International Co., Ltd.
  • Current Assignee: MACRONIX International Co., Ltd.
  • Current Assignee Address: TW Hsinchu
  • Agency: J.C. Patents
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763 ;  H01L29/788
Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer
Abstract:
A method for fabricating a non-volatile memory is provided. The method includes a stacked structure and a consuming layer are formed in sequence over a substrate. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. A conductive layer is formed over the stacked layer and the first insulating layer.
Abstract(Chinese):

提供了一种用于制造非易失性存储器的方法。 该方法包括层叠结构，并且消耗层依次形成在衬底上。 在消耗层的周边区域进行A转换处理以形成第一绝缘层。 在堆叠层和第一绝缘层上形成导电层。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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