Invention Grant
US07883979B2 Method for manufacturing a semiconductor device with reduced floating body effect
有权
制造具有减小的浮体效应的半导体器件的方法
- Patent Title: Method for manufacturing a semiconductor device with reduced floating body effect
- Patent Title (中): 制造具有减小的浮体效应的半导体器件的方法
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Application No.: US10973966Application Date: 2004-10-26
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Publication No.: US07883979B2Publication Date: 2011-02-08
- Inventor: Hung-Wei Chen , Zhong Tang Xuan , Shui-Ming Cheng , Sheng-Da Liu
- Applicant: Hung-Wei Chen , Zhong Tang Xuan , Shui-Ming Cheng , Sheng-Da Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each situated extending a second depth within the substrate, the second depth not equal to the first depth.
Public/Granted literature
- US20060086987A1 Method for manufacturing a semiconductor device with reduced floating body effect Public/Granted day:2006-04-27
Information query
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