Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture thereof
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US12762172Application Date: 2010-04-16
-
Publication No.: US07883987B2Publication Date: 2011-02-08
- Inventor: Armin Tilke , Frank Huebinger , Hermann Wendt
- Applicant: Armin Tilke , Frank Huebinger , Hermann Wendt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/00
Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and a trench formed within the workpiece. The trench has an upper portion and a lower portion, the upper portion having a first width and the lower portion having a second width, the second width being greater than the first width. A first material is disposed in the lower portion of the trench at least partially in regions where the second width of the lower portion is greater than the first width of the upper portion. A second material is disposed in the upper portion of the trench and at least in the lower portion of the trench beneath the upper portion.
Public/Granted literature
- US20100197112A1 Semiconductor Devices and Methods of Manufacture Thereof Public/Granted day:2010-08-05
Information query
IPC分类:
