Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12578722Application Date: 2009-10-14
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Publication No.: US07883989B2Publication Date: 2011-02-08
- Inventor: Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
- Applicant: Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-368029 20031028
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/30 ; H01L21/78 ; H01L21/301

Abstract:
It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
Public/Granted literature
- US20100035407A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-02-11
Information query
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