Void-free copper filling of recessed features for semiconductor devices

Invention Grant

US07884012B2 Void-free copper filling of recessed features for semiconductor devices 有权

Title translation: 半导体器件凹陷特征的无孔铜填充

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Patent Title: Void-free copper filling of recessed features for semiconductor devices
Patent Title (中): 半导体器件凹陷特征的无孔铜填充
Application No.: US11864566

Application Date: 2007-09-28
Publication No.: US07884012B2

Publication Date: 2011-02-08
Inventor: Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
Applicant: Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Wood, Herron & Evans, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Void-free copper filling of recessed features for semiconductor devices

Abstract:

A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.

Abstract(Chinese):

提供了一种用于半导体器件中凹陷特征的无空隙铜（Cu）填充的方法。该方法包括提供含有凹陷特征的图案化衬底，在图案化衬底上沉积阻挡膜，包括在凹陷特征中，在阻挡膜上沉积Ru金属膜，以及在Ru金属膜上沉积不连续的Cu籽晶层，其中Cu籽晶层部分地覆盖凹陷特征中的Ru金属膜。该方法还包括将衬底暴露于氧化Cu籽晶层的氧化源气体和未被Cu籽晶层覆盖的Ru金属膜的部分，在高温下热处理氧化的Cu种子层和氧化的Ru金属膜真空条件下或在惰性气体存在下活化用于Cu电镀的氧化的Ru金属膜，并用块状Cu金属填充凹陷特征。暴露于氧化源气体可以是在镀铜之前在半导体器件制造中通常遇到的空气暴露。

Public/Granted literature

US20090087981A1 VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEVICES Public/Granted day:2009-04-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）