Invention Grant
US07884019B2 Poison-free and low ULK damage integration scheme for damascene interconnects
有权
无毒低密度ULK损伤集成方案，用于大马士革互连
- Patent Title: Poison-free and low ULK damage integration scheme for damascene interconnects
- Patent Title (中): 无毒低密度ULK损伤集成方案，用于大马士革互连
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Application No.: US11759451Application Date: 2007-06-07
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Publication No.: US07884019B2Publication Date: 2011-02-08
- Inventor: Ping Jiang , William W. Dostalik , Yong Seok Choi
- Applicant: Ping Jiang , William W. Dostalik , Yong Seok Choi
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763
Abstract:
A method of forming a dual-damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using the tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth.
Public/Granted literature
- US20080305625A1 POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS Public/Granted day:2008-12-11
Information query
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