Invention Grant
- Patent Title: Polishing cloth and method of manufacturing semiconductor device
- Patent Title (中): 抛光布和半导体器件的制造方法
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Application No.: US11863788Application Date: 2007-09-28
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Publication No.: US07884020B2Publication Date: 2011-02-08
- Inventor: Hideaki Hirabayashi , Naoaki Sakurai , Akiko Saito , Koji Sato , Tomiho Yamada
- Applicant: Hideaki Hirabayashi , Naoaki Sakurai , Akiko Saito , Koji Sato , Tomiho Yamada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-400915 20031128
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A polishing cloth used in the chemical mechanical polishing treatment comprises a molded body of (meth)acrylic copolymer having an acid value of 10 to 100 mg KOH/g and a hydroxyl group value of 50 to 150 mg KOH/g.
Public/Granted literature
- US20080032504A1 POLISHING CLOTH AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-02-07
Information query
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