Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11589979Application Date: 2006-10-31
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Publication No.: US07884027B2Publication Date: 2011-02-08
- Inventor: Yoshihiro Uozumi , Takashi Hirayama , Akira Kugita
- Applicant: Yoshihiro Uozumi , Takashi Hirayama , Akira Kugita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-317704 20051031
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of manufacturing a semiconductor device includes subjecting a semiconductor substrate having an aluminum film formed thereabove to a processing to at least partially expose a surface of the aluminum film, and carrying out a surface processing to remove an after-processing residue that remains on the exposed surface of the aluminum film. The surface processing includes treating the exposed surface of the aluminum film with a first liquid chemical containing an anion component and then with an alkaline, second liquid chemical.
Public/Granted literature
- US20070105378A1 Method of manufacturing semiconductor device Public/Granted day:2007-05-10
Information query
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