Invention Grant
- Patent Title: Thin film deposition
- Patent Title (中): 薄膜沉积
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Application No.: US11260899Application Date: 2005-10-28
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Publication No.: US07884032B2Publication Date: 2011-02-08
- Inventor: Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
- Applicant: Mengqi Ye , Peijun Ding , Hougong Wang , Zhendong Liu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes & Victor LLP
- Main IPC: H01L21/469
- IPC: H01L21/469

Abstract:
A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
Public/Granted literature
- US20070099438A1 Thin film deposition Public/Granted day:2007-05-03
Information query
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