Invention Grant
- Patent Title: Antiferroelectric multilayer ceramic capacitor
- Patent Title (中): 反铁电多层陶瓷电容器
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Application No.: US12837666Application Date: 2010-07-16
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Publication No.: US07884042B2Publication Date: 2011-02-08
- Inventor: Wesley S. Hackenberger , Seongtae Kwon
- Applicant: Wesley S. Hackenberger , Seongtae Kwon
- Applicant Address: US PA State College
- Assignee: TRS Technologies, Inc.
- Current Assignee: TRS Technologies, Inc.
- Current Assignee Address: US PA State College
- Agency: McNees Wallace & Nurick, LLC
- Main IPC: C04B35/457
- IPC: C04B35/457 ; C04B35/491
Abstract:
An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.
Public/Granted literature
- US20100279844A1 ANTIFERROELECTRIC MULTILAYER CERAMIC CAPACITOR Public/Granted day:2010-11-04
Information query
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