Invention Grant
- Patent Title: Gallium nitride layer with diamond layers
- Patent Title (中): 具有金刚石层的氮化镓层
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Application No.: US12753354Application Date: 2010-04-02
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Publication No.: US07884373B2Publication Date: 2011-02-08
- Inventor: Ralph Korenstein , Steven D. Bernstein , Stephen J. Pereira
- Applicant: Ralph Korenstein , Steven D. Bernstein , Stephen J. Pereira
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/00
Abstract:
In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.
Public/Granted literature
- US20100187544A1 FABRICATING A GALLIUM NITRIDE LAYER WITH DIAMOND LAYERS Public/Granted day:2010-07-29
Information query
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