Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US12155595Application Date: 2008-06-06
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Publication No.: US07884380B2Publication Date: 2011-02-08
- Inventor: Min-Hsun Hsieh
- Applicant: Min-Hsun Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW96120457A 20070606
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.
Public/Granted literature
- US20080303048A1 Semiconductor light emitting device Public/Granted day:2008-12-11
Information query
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