Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12657809Application Date: 2010-01-28
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Publication No.: US07884386B2Publication Date: 2011-02-08
- Inventor: Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
- Applicant: Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JPP2009-026672 20090206
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.
Public/Granted literature
- US20100200868A1 Semiconductor Light-emitting device Public/Granted day:2010-08-12
Information query
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