High electron mobility transistor, field-effect transistor, and epitaxial substrate

Invention Grant

US07884393B2 High electron mobility transistor, field-effect transistor, and epitaxial substrate 有权

Title translation: 高电子迁移率晶体管，场效应晶体管和外延衬底

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Patent Title: High electron mobility transistor, field-effect transistor, and epitaxial substrate
Patent Title (中): 高电子迁移率晶体管，场效应晶体管和外延衬底
Application No.: US12786440

Application Date: 2010-05-25
Publication No.: US07884393B2

Publication Date: 2011-02-08
Inventor: Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
Applicant: Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
Applicant Address: JP Osaka
Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee Address: JP Osaka
Agent James W. Judge
Priority: JP2005-154406 20050526
Main IPC: H01L29/778
IPC: H01L29/778

High electron mobility transistor, field-effect transistor, and epitaxial substrate

Abstract:

Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate (13) composed of gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (21), a source electrode (23) and a drain electrode (25) for the transistor (11). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm−3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm−3.

Abstract(Chinese):

提供具有高纯度沟道层和高电阻缓冲层的高电子迁移率晶体管。高电子迁移率晶体管（11）设置有由氮化镓构成的支撑基板（13），由第一氮化镓半导体构成的缓冲层（15），由第二氮化镓半导体构成的沟道层（17）由第三氮化镓半导体构成的半导体层（19）和用于晶体管（11）的电极结构（栅电极（21），源电极（23）和漏电极（25）），带隙第三氮化镓半导体的第二氮化镓半导体的碳浓度NC2比第二氮化镓半导体的碳浓度小于4×10 17 cm -3以上， 1016厘米-3。

Public/Granted literature

US20100230723A1 High Electron Mobility Transistor, Field-Effect Transistor, and Epitaxial Substrate Public/Granted day:2010-09-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/778	.....带有二维载流子气沟道的，如HEMT