Invention Grant
- Patent Title: One-transistor random access memory technology compatible with metal gate process
- Patent Title (中): 单晶体管随机存取技术兼容金属栅极工艺
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Application No.: US11836710Application Date: 2007-08-09
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Publication No.: US07884408B2Publication Date: 2011-02-08
- Inventor: Kuo-Chi Tu , Kuo-Chyuan Tzeng , Chung-Yi Chen , Jian-Yu Shen , Chun-Yao Chen , Hsiang-Fan Lee
- Applicant: Kuo-Chi Tu , Kuo-Chyuan Tzeng , Chung-Yi Chen , Jian-Yu Shen , Chun-Yao Chen , Hsiang-Fan Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
Public/Granted literature
- US20080073688A1 One-Transistor Random Access Memory Technology Compatible with Metal Gate Process Public/Granted day:2008-03-27
Information query
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