Invention Grant
US07884412B2 System and method of forming a split-gate flash memory structure including partial circular sidewalls of the floating gates and control gates
有权
形成包括浮动栅极和控制栅极的部分圆形侧壁的分裂栅极闪存结构的系统和方法
- Patent Title: System and method of forming a split-gate flash memory structure including partial circular sidewalls of the floating gates and control gates
- Patent Title (中): 形成包括浮动栅极和控制栅极的部分圆形侧壁的分裂栅极闪存结构的系统和方法
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Application No.: US11562731Application Date: 2006-11-22
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Publication No.: US07884412B2Publication Date: 2011-02-08
- Inventor: Shieh Feng Huang , Jiun Nan Chen , Lien Yo Tsai
- Applicant: Shieh Feng Huang , Jiun Nan Chen , Lien Yo Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/76
Abstract:
A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.
Public/Granted literature
- US20070145457A1 System and Method of Forming A Split-Gate Flash Memory Structure Public/Granted day:2007-06-28
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