Invention Grant
US07884415B2 Semiconductor memory device having multiple air gaps in interelectrode insulating film
失效
半导体存储器件在电极间绝缘膜中具有多个气隙
- Patent Title: Semiconductor memory device having multiple air gaps in interelectrode insulating film
- Patent Title (中): 半导体存储器件在电极间绝缘膜中具有多个气隙
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Application No.: US12405457Application Date: 2009-03-17
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Publication No.: US07884415B2Publication Date: 2011-02-08
- Inventor: Hajime Nagano
- Applicant: Hajime Nagano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-151625 20080610
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/76 ; H01L21/3205 ; H01L21/4763
Abstract:
In a semiconductor device, each of a plurality of floating gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of control gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of inter-electrode insulating films includes a first air gap formed in a first portion corresponding to the intermediate portion of each floating gate electrode and a second air gap formed in a second portion corresponding to the intermediate portion of each control gate electrode.
Public/Granted literature
- US20090302367A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD Public/Granted day:2009-12-10
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