Invention Grant
- Patent Title: Layout design method of semiconductor integrated circuit having well supplied with potential different from substrate potential
- Patent Title (中): 半导体集成电路的布局设计方法具有很好的不同于衬底电位的电位
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Application No.: US11591550Application Date: 2006-11-02
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Publication No.: US07884426B2Publication Date: 2011-02-08
- Inventor: Kenichi Yoda
- Applicant: Kenichi Yoda
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2005-332885 20051117
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/70 ; H01L27/088 ; H01L29/02 ; H01L27/118

Abstract:
Design time (TAT) is reduced in a layout design of a semiconductor integrated circuit having a well supplied with a potential different from a substrate potential. A layout design method of the present invention includes preparing a first cell pattern placed on a semiconductor substrate of a first conductive type, preparing a second cell pattern having a deep well of a second conductive type, placing the first cell pattern in a first circuit region, and placing the second cell pattern in a second region different from the first circuit region. This reduces TAT in chip design.
Public/Granted literature
- US20070111426A1 Layout design method and layout design tool Public/Granted day:2007-05-17
Information query
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