Invention Grant
- Patent Title: Semiconductor device and electronic apparatus using the same
- Patent Title (中): 半导体装置及使用其的电子设备
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Application No.: US12481252Application Date: 2009-06-09
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Publication No.: US07884437B2Publication Date: 2011-02-08
- Inventor: Masanori Minamio , Tetsushi Nishio
- Applicant: Masanori Minamio , Tetsushi Nishio
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-215398 20080825
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A semiconductor device includes: a semiconductor substrate having an imaging region in which a plurality of photoreceptors are arranged, and a peripheral circuit region arranged around the imaging region; a plurality of microlenses formed on the imaging region; a low-refractive-index film formed on the semiconductor substrate to cover the plurality of microlenses and part of the peripheral circuit region; and a transparent substrate formed on part of the low-refractive-index film above the imaging region. A through hole is formed in part of the low-refractive-index film above an amplifier circuit arranged in the peripheral circuit region.
Public/Granted literature
- US20100044816A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME Public/Granted day:2010-02-25
Information query
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