Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12051221Application Date: 2008-03-19
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Publication No.: US07884455B2Publication Date: 2011-02-08
- Inventor: Taishi Sasaki , Mikio Ishihara
- Applicant: Taishi Sasaki , Mikio Ishihara
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-226353 20070831
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A power module includes: an encapsulation-target portion having at least one semiconductor element; and an encapsulation member that has first and second planes between which the encapsulation-target portion is interposed, and that encapsulates the encapsulation-target portion. The encapsulation member has, on the at least one semiconductor element, at least one opening that exposes part of a surface of the encapsulation-target portion the surface being on a side of the first plane. Thus, a semiconductor device of which size can be reduced can be provided.
Public/Granted literature
- US20090057929A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-03-05
Information query
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