Invention Grant
- Patent Title: Semiconductor device with double-sided electrode structure and its manufacturing method
- Patent Title (中): 具有双面电极结构的半导体器件及其制造方法
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Application No.: US12279402Application Date: 2007-04-09
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Publication No.: US07884466B2Publication Date: 2011-02-08
- Inventor: Masamichi Ishihara , Fumihiko Ooka , Yoshihiko Ino
- Applicant: Masamichi Ishihara , Fumihiko Ooka , Yoshihiko Ino
- Applicant Address: JP Tokyo
- Assignee: Oki Electric Industry Co., Ltd.
- Current Assignee: Oki Electric Industry Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGlew and Tuttle, P.C.
- Priority: JP2006-120127 20060425
- International Application: PCT/JP2007/057812 WO 20070409
- International Announcement: WO2007/125744 WO 20071108
- Main IPC: H01L23/12
- IPC: H01L23/12

Abstract:
According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated within the recess portion. Wiring traces are formed on the upper surface of a resin which seals the LSI chip connected to the multilayer wiring. The wiring traces are connected to terminal wiring traces connected to the multilayer wiring on the front face of the package substrate and to front-face bump electrodes for external connection on the upper surface of the resin. On the back face side of the package substrate, back-face bump electrodes for external connection are formed and connected to the multilayer wiring.
Public/Granted literature
- US20090072381A1 SEMICONDUCTOR DEVICE WITH DOUBLE-SIDED ELECTRODE STRUCTURE AND ITS MANUFACTURING METHOD Public/Granted day:2009-03-19
Information query
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