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US07884479B2 Top layers of metal for high performance IC's 有权
高性能IC的金属顶层

Top layers of metal for high performance IC's
Abstract:
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
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