Invention Grant
US07884488B2 Semiconductor component with improved contact pad and method for forming the same
有权
具有改进的接触焊盘的半导体部件及其形成方法
- Patent Title: Semiconductor component with improved contact pad and method for forming the same
- Patent Title (中): 具有改进的接触焊盘的半导体部件及其形成方法
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Application No.: US12113352Application Date: 2008-05-01
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Publication No.: US07884488B2Publication Date: 2011-02-08
- Inventor: Harry Hedler
- Applicant: Harry Hedler
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agent John S. Economou
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/00
Abstract:
A structure and method of forming low cost bond pads is described. In one embodiment, the invention includes depositing an insulating layer over a last metal line of a substrate and forming an opening in the insulating layer. A colloid is printed over the insulating layer and fills the opening in the insulating layer. A conductive via and bond pads are formed by heating the colloid.
Public/Granted literature
- US20090273097A1 Semiconductor Component with Contact Pad Public/Granted day:2009-11-05
Information query
IPC分类:
