Invention Grant
- Patent Title: Piezoelectric thin film device
- Patent Title (中): 压电薄膜器件
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Application No.: US12358379Application Date: 2009-01-23
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Publication No.: US07884531B2Publication Date: 2011-02-08
- Inventor: Kenji Shibata , Fumihito Oka
- Applicant: Kenji Shibata , Fumihito Oka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2008-013973 20080124
- Main IPC: H01L41/187
- IPC: H01L41/187
Abstract:
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
Public/Granted literature
- US20090189490A1 Piezoelectric Thin Film Device Public/Granted day:2009-07-30
Information query
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