Invention Grant
- Patent Title: Capacitance sensing structure
- Patent Title (中): 电容感测结构
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Application No.: US11956527Application Date: 2007-12-14
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Publication No.: US07884624B2Publication Date: 2011-02-08
- Inventor: Horng-Jou Wang , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
- Applicant: Horng-Jou Wang , Hsieh-Shen Hsieh , Chao-Jui Liang , Cheng-Chang Lee , Chao-Qing Wang , Zong-Ting Yuan , Huang-Kun Chen , Tai-Kang Shing
- Applicant Address: TW Taoyuan Hsien
- Assignee: Delta Electronics, Inc.
- Current Assignee: Delta Electronics, Inc.
- Current Assignee Address: TW Taoyuan Hsien
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW95148390A 20061222
- Main IPC: G01R27/26
- IPC: G01R27/26
Abstract:
A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.
Public/Granted literature
- US20080150554A1 CAPACITANCE SENSING STRUCTURE Public/Granted day:2008-06-26
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