Invention Grant
- Patent Title: Calibration circuit and semiconductor memory device with the same
- Patent Title (中): 校准电路和半导体存储器件相同
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Application No.: US11967720Application Date: 2007-12-31
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Publication No.: US07884637B2Publication Date: 2011-02-08
- Inventor: Chun-Seok Jeong
- Applicant: Chun-Seok Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0087070 20070829
- Main IPC: H03K17/16
- IPC: H03K17/16
Abstract:
A calibration circuit is capable of correcting an error of a calibration operation by adjusting a calibration code generated thereby. The calibration circuit of a semiconductor memory device includes a code generator, a calibration resistor unit, and a variable resistor unit. The code generator is configured to generate a calibration code for determining a termination resistance in response to a voltage of a first node and a reference voltage. The calibration resistor unit, which has internal resistors turned on/off in response to the calibration code, is connected to the first node. The variable resistor unit is connected in parallel with the calibration resistor unit and has a resistance that varies with a setting value.
Public/Granted literature
- US20090059704A1 CALIBRATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME Public/Granted day:2009-03-05
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