Invention Grant
- Patent Title: Adaptive wordline programming bias of a phase change memory
- Patent Title (中): 相变存储器的自适应字线编程偏置
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Application No.: US11901493Application Date: 2007-09-18
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Publication No.: US07885099B2Publication Date: 2011-02-08
- Inventor: Richard E. Fackenthal , Ferdinando Bedeschi , Meenatchi Jagasivamani , Ravi Annavajjhala , Enzo M. Donze
- Applicant: Richard E. Fackenthal , Ferdinando Bedeschi , Meenatchi Jagasivamani , Ravi Annavajjhala , Enzo M. Donze
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.
Public/Granted literature
- US20090073752A1 Adaptive wordline programming bias of a phase change memory Public/Granted day:2009-03-19
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