Invention Grant
- Patent Title: Information storage devices using magnetic domain wall movement and methods of operating the same
- Patent Title (中): 信息存储设备采用磁畴壁运动和操作方式相同
-
Application No.: US12155798Application Date: 2008-06-10
-
Publication No.: US07885104B2Publication Date: 2011-02-08
- Inventor: Ji-young Bae , Kwang-seok Kim , Mathias Kläui
- Applicant: Ji-young Bae , Kwang-seok Kim , Mathias Kläui
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2008-0003933 20080114
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic layer. The magnetic layer includes first and second pinning regions at which magnetic domain walls are pinned. The widths of the magnetic layer at the first and second pinning regions are different.
Public/Granted literature
- US20090180218A1 Information storage devices using magnetic domain wall movement and methods of operating the same Public/Granted day:2009-07-16
Information query
