Invention Grant
- Patent Title: Magnetic tunnel junction cell including multiple vertical magnetic domains
- Patent Title (中): 磁隧道结电池包括多个垂直磁畴
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Application No.: US12054536Application Date: 2008-03-25
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Publication No.: US07885105B2Publication Date: 2011-02-08
- Inventor: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan Velasco
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.
Public/Granted literature
- US20090243009A1 Magnetic Tunnel Junction Cell Including Multiple Vertical Magnetic Domains Public/Granted day:2009-10-01
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