A memory programming method may include identifying at least one of a plurality of memory cells with a threshold voltage to be changed based on a pattern of data to be programmed in the at least one of the plurality of memory cells, applying a program condition voltage to the at least one identified memory cell until the threshold voltage of the at least one identified memory cell is included in a first threshold voltage interval, to thereby adjust the threshold voltage of the at least one identified memory cell, and programming the data in the at least one identified memory cell with the adjusted threshold voltage.