Invention Grant
- Patent Title: Memory control device
- Patent Title (中): 内存控制装置
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Application No.: US12090397Application Date: 2006-10-19
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Publication No.: US07885133B2Publication Date: 2011-02-08
- Inventor: Daisuke Murakami , Yuji Takai , Takahide Baba
- Applicant: Daisuke Murakami , Yuji Takai , Takahide Baba
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-305511 20051020
- International Application: PCT/JP2006/320871 WO 20061019
- International Announcement: WO2007/046481 WO 20070426
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A clock enable (CKE) control circuit (112) is provided between a memory control circuit (111) and a SDRAM (120). When a system is in, e.g., a sleep state, the CKE control circuit (112) controls a CKE signal outputted to the SDRAM (120) such that it is fixed to a Low level. As a result, it is possible to halt a power supply provided to the memory control circuit (111), while maintaining the low-power-consumption mode of the SDRAM (120), so that power consumption resulting from a leakage current is suppressed. In addition, it becomes also possible to reset the memory control circuit (111), while maintaining the low-power-consumption mode of the SDRAM (120).
Public/Granted literature
- US20090282270A1 MEMORY CONTROL DEVICE Public/Granted day:2009-11-12
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