Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12323221Application Date: 2008-11-25
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Publication No.: US07885135B2Publication Date: 2011-02-08
- Inventor: Kang-Seol Lee , Seok-Cheol Yoon
- Applicant: Kang-Seol Lee , Seok-Cheol Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0063152 20080630
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor memory device that prevents a power noise generated at a data input/output pad in a read operation from affecting a data strobe signal pad. The semiconductor memory device includes first power supply voltage pads for a data output circuit, a first power mesh, and a second power supply voltage pad for a data strobe signal output circuit. The first power mesh connects first power supply voltage pads to one another. The second power supply voltage pad is electrically separated from the first power mesh.
Public/Granted literature
- US20090323451A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-12-31
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