Invention Grant
- Patent Title: Control circuit of flash memory device and method of operating the flash memory device
- Patent Title (中): 闪存设备的控制电路和操作闪存设备的方法
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Application No.: US11967135Application Date: 2007-12-29
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Publication No.: US07885137B2Publication Date: 2011-02-08
- Inventor: Seok-Jin Joo
- Applicant: Seok-Jin Joo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0039715 20070424
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Provided is a method of operating a flash memory device having a first area and a second area, in which a programmed state and an erased state of the first area are opposite to that of the second area. The method includes receiving a program command, inverting the program data when the received program command is a command for programming the second area, and programming the inverted program data into the second area.
Public/Granted literature
- US20080270679A1 CONTROL CIRCUIT OF FLASH MEMORY DEVICE AND METHOD OF OPERATING THE FLASH MEMORY DEVICE Public/Granted day:2008-10-30
Information query
