Invention Grant
US07885169B2 Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
有权
具有垂直结构的电场传感器,其制造方法和使用该电场传感器的存储单元
- Patent Title: Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
- Patent Title (中): 具有垂直结构的电场传感器,其制造方法和使用该电场传感器的存储单元
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Application No.: US12138055Application Date: 2008-06-12
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Publication No.: US07885169B2Publication Date: 2011-02-08
- Inventor: Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
- Applicant: Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0101667 20071009
- Main IPC: G11B7/00
- IPC: G11B7/00

Abstract:
An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.
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