Invention Grant
- Patent Title: Vertical-cavity surface-emitting semiconductor laser device
- Patent Title (中): 垂直腔表面发射半导体激光器件
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Application No.: US11551101Application Date: 2006-10-19
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Publication No.: US07885307B2Publication Date: 2011-02-08
- Inventor: Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
- Applicant: Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-305567 20051020; JP2006-278621 20061012
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
Public/Granted literature
- US20070091965A1 VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE Public/Granted day:2007-04-26
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