Invention Grant
- Patent Title: RF integrated circuit having an on-chip pressure sensing circuit
- Patent Title (中): RF集成电路具有片上压力感测电路
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Application No.: US12634841Application Date: 2009-12-10
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Publication No.: US07885611B2Publication Date: 2011-02-08
- Inventor: Ahmadreza (Reza) Rofougaran
- Applicant: Ahmadreza (Reza) Rofougaran
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Garlick Harrison & Markison
- Agent Bruce E. Stuckman
- Main IPC: H04B1/06
- IPC: H04B1/06

Abstract:
An integrated circuit includes a on-chip pressure sensing circuit that generates a pressure signal based on a pressure of the integrated circuit. A processing module, generates a control signal based on the pressure signal. An RF transceiver generates an outbound RF signal from outbound data and to generate inbound data from an inbound RF signal, based on the control signal.
Public/Granted literature
- US20100094571A1 RF INTEGRATED CIRCUIT HAVING AN ON-CHIP PRESSURE SENSING CIRCUIT Public/Granted day:2010-04-15
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