Invention Grant
US07885629B2 Circuit with Q-enhancement cell having programmable bias current slope
有权
具有可编程偏置电流斜率的Q增强单元电路
- Patent Title: Circuit with Q-enhancement cell having programmable bias current slope
- Patent Title (中): 具有可编程偏置电流斜率的Q增强单元电路
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Application No.: US11510373Application Date: 2006-08-25
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Publication No.: US07885629B2Publication Date: 2011-02-08
- Inventor: Adedayo Ojo , Arya Behzad
- Applicant: Adedayo Ojo , Arya Behzad
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H04B1/10
- IPC: H04B1/10

Abstract:
Various embodiments are disclosed relating to Q-enhancement cells. According to an example embodiment, a circuit may include an inductor with a quality factor (Q), and a Q-enhancement cell coupled to the inductor. The Q-enhancement cell may include a current source having a variable bias current slope. Stability may, for example, be improved by providing a variable or programmable bias current slope for the Q-enhancement cell. In another example embodiment, a Q-enhancement cell may be used to compensate for Q degradation due to one or more switched capacitors in a circuit. The switched capacitors may be used, for example, for channel or frequency selection for the circuit. In another example embodiment, a Q-enhancement cell may be used to compensate for Q degradation caused by a transmission line.
Public/Granted literature
- US20080032661A1 Circuit with Q-enhancement cell having programmable bias current slope Public/Granted day:2008-02-07
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