Invention Grant
US07885774B2 System and method for analyzing power flow in semiconductor plasma generation systems 有权
用于分析半导体等离子体发生系统中的功率流的系统和方法

  • Patent Title: System and method for analyzing power flow in semiconductor plasma generation systems
  • Patent Title (中): 用于分析半导体等离子体发生系统中的功率流的系统和方法
  • Application No.: US11921688
    Application Date: 2006-05-10
  • Publication No.: US07885774B2
    Publication Date: 2011-02-08
  • Inventor: John D. Swank
  • Applicant: John D. Swank
  • Applicant Address: US OH Solon
  • Assignee: Bird Technologies Group Inc.
  • Current Assignee: Bird Technologies Group Inc.
  • Current Assignee Address: US OH Solon
  • Agency: Wegman, Hessler & Vanderburg
  • International Application: PCT/US2006/018087 WO 20060510
  • International Announcement: WO2006/135515 WO 20061221
  • Main IPC: G01R33/422
  • IPC: G01R33/422
System and method for analyzing power flow in semiconductor plasma generation systems
Abstract:
A system and method for measuring and analyzing power flow parameters in RF-based excitation systems for semi-conductor plasma generators. A measuring probe (8) is connected to an RF transmission line for receiving and measuring voltage (10) and current signals (12) from the transmission line (4). A high-speed sampling process converts the measured RF voltage and current signals into digital signals. The digital signals are then processed so as to reveal fundamental and harmonic amplitude and phase information corresponding to the original RF signals. Multiple measuring probes may be inserted in the power transmission path to measure two-port parameters, and the networked probes may be interrogated to determine input impedance, output impedance, insertion loss, internal dissipation, power flow efficiency, scattering, and the effect of plasma non-linearity on the RF signal.
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