Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
-
Application No.: US11664133Application Date: 2005-09-20
-
Publication No.: US07886689B2Publication Date: 2011-02-15
- Inventor: Toshimasa Takeuchi , Setsuo Nakajima , Naomichi Saito , Osamu Nishikawa
- Applicant: Toshimasa Takeuchi , Setsuo Nakajima , Naomichi Saito , Osamu Nishikawa
- Applicant Address: JP Osaka
- Assignee: Sekisui Chemical Co., Ltd.
- Current Assignee: Sekisui Chemical Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-285506 20040929; JP2004-285507 20040929; JP2004-285508 20040929; JP2005-212397 20050722; JP2005-240542 20050823; JP2005-240543 20050823; JP2005-249345 20050830; JP2005-263237 20050912
- International Application: PCT/JP2005/017251 WO 20050920
- International Announcement: WO2006/035628 WO 20060406
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus.The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.
Public/Granted literature
- US20080115892A1 Plasma Processing Apparatus Public/Granted day:2008-05-22
Information query
IPC分类: