Invention Grant
- Patent Title: Method and apparatus for manufacturing semiconductor device
- Patent Title (中): 用于制造半导体器件的方法和装置
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Application No.: US11936224Application Date: 2007-11-07
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Publication No.: US07887323B2Publication Date: 2011-02-15
- Inventor: Hak Joon Kim , Jun Hyung Park
- Applicant: Hak Joon Kim , Jun Hyung Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0065546 20070629
- Main IPC: G03D3/00
- IPC: G03D3/00 ; G03D7/00 ; F27D13/00

Abstract:
A method and apparatus for manufacturing a semiconductor device is disclosed. In particular, the application discloses a method that performs a lithography process using a material capable of increasing a depth of focus so as to prevent efficiency of the lithography process from being degraded due to high integration of a semiconductor device, and a pressure-type bake oven as an apparatus for forming a high refractive material on a semiconductor substrate, having advantages of reducing manufacturing costs of a semiconductor manufacturing process and increasing efficiency of the lithography process.
Public/Granted literature
- US20090004610A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-01-01
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