Invention Grant
US07887628B2 Thick single crystal diamond layer method for making it and gemstones produced from the layer
有权
用于制造它的厚单晶金刚石层方法和从该层产生的宝石
- Patent Title: Thick single crystal diamond layer method for making it and gemstones produced from the layer
- Patent Title (中): 用于制造它的厚单晶金刚石层方法和从该层产生的宝石
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Application No.: US11681840Application Date: 2007-03-05
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Publication No.: US07887628B2Publication Date: 2011-02-15
- Inventor: Geoffrey Alan Scarsbrook , Philip Maurice Martineau , Barbel Susanne Charlotte Dorn , Michael Andrew Cooper , John Lloyd Collins , Andrew John Whitehead , Daniel James Twitchen , Ricardo Simon Sussman
- Applicant: Geoffrey Alan Scarsbrook , Philip Maurice Martineau , Barbel Susanne Charlotte Dorn , Michael Andrew Cooper , John Lloyd Collins , Andrew John Whitehead , Daniel James Twitchen , Ricardo Simon Sussman
- Applicant Address: ZA Johannesburg
- Assignee: Element Six Technologies (Pty) Ltd
- Current Assignee: Element Six Technologies (Pty) Ltd
- Current Assignee Address: ZA Johannesburg
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: GB0014690.2 20000615; GB0106929.3 20010320
- Main IPC: B32B9/00
- IPC: B32B9/00
Abstract:
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer.
Public/Granted literature
- US20080044339A1 THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER Public/Granted day:2008-02-21
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