Invention Grant
- Patent Title: System and high pressure, high temperature apparatus for producing synthetic diamonds
- Patent Title (中): 用于生产人造钻石的系统和高压,高温装置
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Application No.: US11165542Application Date: 2005-06-24
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Publication No.: US07887631B2Publication Date: 2011-02-15
- Inventor: Robert Chodelka , Hexiang Zhu , Alexander Novikov
- Applicant: Robert Chodelka , Hexiang Zhu , Alexander Novikov
- Applicant Address: US FL Sarasota
- Assignee: The Gemesis Corporation
- Current Assignee: The Gemesis Corporation
- Current Assignee Address: US FL Sarasota
- Agency: The Nath Law Group
- Agent Jerald L. Meyer
- Main IPC: C30B29/06
- IPC: C30B29/06

Abstract:
An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
Public/Granted literature
- US20060288927A1 System and high pressure, high temperature apparatus for producing synthetic diamonds Public/Granted day:2006-12-28
Information query
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