Invention Grant
- Patent Title: Method of producing a semiconductor element and semiconductor element
- Patent Title (中): 半导体元件和半导体元件的制造方法
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Application No.: US11615592Application Date: 2006-12-22
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Publication No.: US07887634B2Publication Date: 2011-02-15
- Inventor: Luis-Felipe Giles
- Applicant: Luis-Felipe Giles
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Dickstein Shapiro LLP
- Main IPC: C30B21/02
- IPC: C30B21/02
Abstract:
In a method of producing a semiconductor element in a substrate, a plurality of carbide precipitates is formed in the substrate, doping atoms are implanted into the substrate, thereby forming crystal defects in the substrate, the substrate is heated, such that at least a part of the crystal defects is eliminated using the carbide precipitates, and the semiconductor element is formed using the doping atoms.
Public/Granted literature
- US20080149929A1 METHOD OF PRODUCING A SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT Public/Granted day:2008-06-26
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